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參數(shù)資料
| 型號： | PZT2907AT3 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-261AA |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 600毫安一（c）|至261AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | PZT2907AT3 |
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
–60
Vdc
Collector-Base Voltage
V
CBO
–60
Vdc
Emitter-Base Voltage
V
EBO
–5.0
Vdc
Collector Current
I
C
–600
mAdc
Total Power Dissipation @ T
A
= 25
°
C
(1)
Derate above 25
°
C
P
D
1.5
12
Watts
mW/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
–65 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θ
JA
83.3
°
C/W
Lead Temperature for Soldering, 0.0625
″
from case
Time in Solder Bath
T
L
260
10
°
C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= –10
μ
Adc, I
E
= 0)
V
(BR)CBO
–60
°
—
°
—
Vdc
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
–60
—
—
Vdc
Emitter-Base Breakdown Voltage (I
E
= –10
μ
Adc, I
C
= 0)
V
(BR)EBO
–5.0
°
—
°
—
Vdc
Collector-Base Cutoff Current (V
CB
= –50 Vdc, I
E
= 0)
I
CBO
—
°
—
°
–10
nAdc
Collector-Emitter Cutoff Current (V
CE
= –30 Vdc, V
BE
= 0.5 Vdc)
I
CEX
—
—
–50
nAdc
Base-Emitter Cutoff Current (V
CE
= –30 Vdc, V
BE
= –0.5 Vdc)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
I
BEX
—
—
–50
nAdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 5
1
Publication Order Number:
PZT2907AT1/D
PZT2907AT1
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
ON Semiconductor Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR
2,4
BASE 1
3
EMITTER
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| PZT3904 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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