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參數(shù)資料
| 型號(hào)： | PZT2222AT3 |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | SOT-223 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 600毫安一（c）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | PZT2222AT3 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
PNP Complement is PZT2907AT1
The SOT-223 package can be soldered using wave or reflow.
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.
Available in 12 mm tape and reel
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
40
Vdc
Collector-Base Voltage
75
Vdc
Emitter-Base Voltage (Open Collector)
6.0
Vdc
Collector Current
Total Power Dissipation up to TA = 25
°
C(1)
Storage Temperature Range
°
600
mAdc
1.5
Watts
– 65 to +150
°
C
Junction Temperature
°
150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient
R
θ
JA
TL
83.3
°
C/W
Lead Temperature for Soldering, 0.0625
″
from case
Time in Solder Bath
260
10
°
C
Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
μ
Adc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
μ
Adc, IC = 0)
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc)
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
Thermal Clad is a trademark of the Bergquist Company
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
40
—
Vdc
°
75
°
°
—
°
Vdc
6.0
—
Vdc
—
20
nAdc
—
10
nAdc
—
100
nAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by PZT2222AT1/D
SEMICONDUCTOR TECHNICAL DATA
BASE
1
COLLECTOR
2, 4
3
EMITTER
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT2907AT3 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-261AA |
| PZT3904 | NPN Switching Double Transistors |
| PZT3906 | PNP switching transistor |
| PZT751T3 | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| PZTA05 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2222AT3G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2222ATR | 制造商:Freescale Semiconductor 功能描述: |
| PZT222A-FC | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| PZT2907 | 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Suface Mount Si-Epitaxial Planar Switching Transistors |
| PZT2907A | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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