參數(shù)資料
型號(hào)： PTF210301E
廠商： INFINEON TECHNOLOGIES AG
英文描述： LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
中文描述： LDMOS射頻功率場(chǎng)效應(yīng)晶體管30瓦，二一一〇年至2170年兆赫
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 337K
代理商： PTF210301E
Data Sheet
1
2003-12-22
PTF210301A
Package 20265
PTF210301E
Package 30265
PTF210301
Description
The PTF210301 is a 30 W, internally matched
GOLDMOS
FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 36.5 dBm
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Units
Intermodulation Distortion
IMD
—
–44
—
dBc
Gain
Drain Efficiency
G
ps
h
D
—
—
16
20
—
—
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
14.5
15
—
Typ
16
18
–47
Max
—
—
–42
Units
dB
%
dBc
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V
DD
= 28 V, I
DQ
= 380 mA
-55
-50
-45
-40
-35
-30
-25
30
32
Average Output Power (dBm)
34
36
38
40
I
0
5
10
15
20
25
30
D
ACPR
Efficiency
IM3
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
相關(guān)PDF資料
PDF描述
PTF210451E BASIC SWITCH
PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF210901E LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF210451 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
PTF210451E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz
PTF210451E V1 功能描述:射頻MOSFET電源晶體管 TRANS MOSFET N-CH 65V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PTF210451F 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz
PTF210451F V1 功能描述:IC FET RF LDMOS 45W H-31265-2 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:GOLDMOS® 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*