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參數(shù)資料
| 型號(hào)： | PTF210901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管90瓦，二一一〇年至2170年兆赫 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 266K |
| 代理商： | PTF210901E |
Data Sheet
1
2004-01-16
PTF210901E
Package 30248
Two–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f
1
= 2140 MHz, f
2
= 2150 MHz,
3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-55
-50
-45
-40
-35
-30
-25
39
40
41
42
43
44
Output Power, Avg. (dBm)
I
5
10
15
20
25
30
E
IM3
Gain
Drain Efficiency
ACPR
PTF210901
Description
The PTF210901 is an internally matched 90 W
GOLDMOS
FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Features
Internal matching for wideband performance
Typical two–carrier 3GPP WCDMA
performance
- Average output power = 19 W at –37 dBc
- Efficiency = 25%
Typical CW performance
- Output power at P–1dB = 105 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR at 28 V,
90 W (CW) output power
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
LDMOS RF Power Field Effect Transistor
90 W, 2110–2170 MHz
RF Performance
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 19 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IMD
G
ps
η
D
Min
—
—
—
Typ
–37
15
25
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in
Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
13.5
36
—
Typ
15
38
–30
Max
—
—
–28
Units
dB
%
dBc
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| PTF211301 | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
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| PTF211802 | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF211301 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211301A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211802 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
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