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參數(shù)資料
| 型號(hào)： | PTF181301A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管130瓦，1805年至1880年兆赫 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | PTF181301A |
Developmental Data Sheet
1 of 4
2004-04-28
EDGE EVM Performance
EVM & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 1.8 A, f = 1879.8 MHz
0
1
2
3
4
35
38
40
43
45
48
50
Output Power (dBm)
E
0
10
20
30
40
E
EVM
Efficiency
Developmental PTF181301
LDMOS RF Power Field Effect Transistor
130 W, 1805–1880 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 55 W
- Gain = 15.5 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 14.5 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
130 W (CW) output power
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF181301 is a 130 W, internally matched
GOLDMOS
FET intended
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF181301A
Package 20260
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 55 W, f = 1879.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
1.7
–60
–73
15.5
32
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.8 A, P
OUT
= 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency at –30 dBc IM3
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
—
—
—
Typ
15.5
35
–30
Max
—
—
—
Unit
dB
%
dBc
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