參數(shù)資料
型號(hào)： PTB20258
廠商： ERICSSON
英文描述： 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor
中文描述： 6瓦，915-960兆赫蜂窩無(wú)線電射頻功率晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 209K
代理商： PTB20258
e
1
PTB 20258
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
traceability is standard.
0
2
4
6
8
0.0
0.1
0.2
Input Power (Watts)
0.3
0.4
0.5
0.6
0.7
O
20
32
44
56
68
80
E
V
CC
= 25 V
I
CQ
= 27 mA
f = 960 MHz
Output Power
Efficiency
Typical Output Power and Efficiency vs. Input Power
Package 20208
20258
LOTCODE
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
6 Watts, 915–960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
22
Watts
W/°C
0.125
Storage Temperature Range
Tstg
-40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
8
°C/W
7-21-98
相關(guān)PDF資料
PDF描述
PTB20264 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
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