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參數(shù)資料
| 型號(hào)： | PTB20264 |
| 廠商： | ERICSSON |
| 英文描述： | 10 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 10瓦，1月8號(hào)至1月9日GHz的無(wú)線蜂窩射頻功率晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 617K |
| 代理商： | PTB20264 |
e
1
PTB 20264
10 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
0
2
4
6
8
10
12
0.0
0.2
0.4
Input Power (Watts)
0.6
0.8
1.0
1.2
1.4
1.6
O
0
20
40
60
80
E
V
CC
= 26 V
I
CQ
= 50 mA
f = 1845 MHz
Typical Output Power and Efficiency vs. Input Power
Output Power
Efficiency
Package 20243
26 Volt, 1.845 GHz Characteristics
- Output Power = 10 Watts
- Gain = 9.4 dB Typ at 5 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20264
Description
The 20264 is an NPN, common emitter RF power transistor intended
for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage, R
BE
= 10
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.0
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
30
Watts
W/°C
0.173
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
5.8
°C/W
9/28/98
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