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參數(shù)資料
| 型號(hào)： | PTB20206 |
| 廠商： | ERICSSON |
| 英文描述： | 1.0 Watt, 470-860 MHz RF Power Transistor |
| 中文描述： | 1.0瓦，470-860 MHz射頻功率晶體管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 380K |
| 代理商： | PTB20206 |
PTB 20206
2
e
Z Source
Z Load
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
C
= 5 mA, I
B
= 0 A
V
(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
55
70
—
Volts
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
V
(BR)CER
40
—
—
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
—
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
50
120
—
Output Capacitance
V
cb
= 20 V, I
E
= 0 A, f = 1 MHz
Cobo
—
4.5
—
pF
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA, f = 860 MHz)
Two-tone Intermodulation Distortion
(V
CE
= 20 Vdc, Pout = 1 W(PEP), I
CQ
= 360 mA,
f
1
= 860 MHz, f
2
= 860.1 MHz),
Load Mismatch Tolerance
(V
CE
= 20 Vdc, Pout = 2 W, I
CQ
= 360 mA,
f = 860 MHz—all phase angles at frequency of test)
G
pe
11
11.5
—
dB
IM
2
—
-46
-44
dBc
Ψ
—
—
30:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA)
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
470
7.2
-6.4
13.7
-6.9
704
6.9
-4.1
12.8
2.3
782
5.8
-4.1
14.4
5.0
860
5.8
-3.6
17.2
7.0
Z
0
= 50
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
1996 Ericsson Inc.
EUS/KR 1301-PTB Uen Rev. B 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20216 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.8-2.0 GHz RF Power Transistor |
| PTB20219 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:70 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20220 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:15 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| PTB20224 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20228 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6.5 Watts, 1.62-1.66 GHz RF Power Transistor |
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