參數(shù)資料
型號(hào): PTB20206
廠商: ERICSSON
英文描述: 1.0 Watt, 470-860 MHz RF Power Transistor
中文描述: 1.0瓦,470-860 MHz射頻功率晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 380K
代理商: PTB20206
e
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.1
0.2
0.3
Input Power (Watts)
O
V
CE
= 20 V
I
CQ
= 360 mA
f = 860 MHz
Typical Output Power vs. Input Power
PTB 20206
1.0 Watt, 470–860 MHz
RF Power Transistor
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
1.7
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
13.5
0.077
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
13.0
°C/W
Description
The 20206 is an NPN common emitter RF power transistor intended
for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Class A Characteristics
1.0 Watt, 470–860 MHz
-44 dBc Max Two-tone IMD at 1 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Package 20206
20206
9/28/98
相關(guān)PDF資料
PDF描述
PTB20216 6 Watts, 1.8-2.0 GHz RF Power Transistor
PTB20219 70 Watts, 925-960 MHz Cellular Radio RF Power Transistor
PTB20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20228 6.5 Watts, 1.62-1.66 GHz RF Power Transistor
PTB20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20216 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.8-2.0 GHz RF Power Transistor
PTB20219 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:70 Watts, 925-960 MHz Cellular Radio RF Power Transistor
PTB20220 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20224 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20228 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6.5 Watts, 1.62-1.66 GHz RF Power Transistor