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參數(shù)資料
| 型號： | PTB20189 |
| 廠商： | ERICSSON |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | UHF TV Linear Power Transistor Cellular Radio RF Power Transistor |
| 中文描述： | 超高頻電視線性功率晶體管蜂窩無線電射頻功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | PTB20189 |
e
1
0.0
0.5
1.0
1.5
2.0
0.00
0.02
Input Power (Watts)
0.04
0.06
0.08
0.10
O
0
20
40
60
80
E
V
CC
= 25 V
I
CQ
= 175 mA
f = 960 MHz
Typical Output Power and Efficiency vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
11
Watts
W/°C
0.063
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
16.0
°C/W
PTB 20189
1 Watt, 900–960 MHz
Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20227
20189
LOT CODE
25 Volt, 900–960 MHz Characteristics
- Output Power = 1 Watt
- Gain = 12 dB Min at 1 Watt
Class A/AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20190 | 175 Watts, 470-806 MHz Digital Television Power Transistor |
| PTB20191 | 12 Watts, 1.78-1.92 GHz RF Power Transistor |
| PTB20193 | 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor |
| PTB20195 | 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor |
| PTB20135 | 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20190 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:175 Watts, 470-806 MHz Digital Television Power Transistor |
| PTB20191 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20193 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20195 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20203 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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