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參數(shù)資料
| 型號(hào)： | PTB20179 |
| 廠商： | ERICSSON |
| 英文描述： | 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 0.4瓦特，1.8-2.0千兆赫蜂窩無線射頻功率晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 201K |
| 代理商： | PTB20179 |
PTB 20179
2
e
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
V
(BR)CER
50
—
—
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 5 mA
V
(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
4
5
—
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 250 mA
h
FE
20
40
—
—
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 26 Vdc, Pout = 0.2 W, I
C
= 120 mA, f = 2.0 GHz)
Output Power at 1 dB Compressed
(V
CC
= 26 Vdc, I
C
= 120 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 0.2 W, I
C
= 120 mA,
f = 2.0 GHz—all phase angles at frequency of test)
G
pe
8
10
—
dB
P-1dB
0.4
0.6
—
Watts
Ψ
—
—
5:1
—
Typical Performance
0
1750
2
4
6
8
10
1800
1850
1900
1950
2000
2050
Frequency (MHz)
5
10
15
20
25
30
E
V
CC
= 26 V
I
C
= 120 mA
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power (W)
Efficiency (%)
Gain (dB)
G
-70
-60
-50
-40
-30
-20
-10
0
0.0
0.2
0.4
0.6
0.8
Output Power (Watts-PEP)
I
V
CC
= 26 V
I
C
= 120 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
Intermodulation Distortion vs. Output Power
IM3
IM7
IM5
5/6/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20180 | 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20187 | 4 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20188 | 4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor |
| PTB20189 | UHF TV Linear Power Transistor Cellular Radio RF Power Transistor |
| PTB20190 | 175 Watts, 470-806 MHz Digital Television Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20180 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20187 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20188 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20189 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20190 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:175 Watts, 470-806 MHz Digital Television Power Transistor |
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