參數(shù)資料
型號: PTB20008
廠商: ERICSSON
英文描述: 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor
中文描述: 10瓦特,935-960兆赫蜂窩無線電射頻功率晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 44K
代理商: PTB20008
e
1
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0.2
0.4
0.6
0.8
1.0
1.2
Input Power (Watts)
O
V
CC
= 24 V
I
CQ
= 100 mA
f = 960 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.7
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
65
0.4
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
2.7
°C/W
PTB 20008
10 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
10 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 10 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20201
20008
LOTCODE
9/28/98
相關(guān)PDF資料
PDF描述
PTB20009 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor
PTB20011 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
PTB20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20030 15 Watts, 420-470 MHz RF Power Transistor
PTB20031 40 Watts, 420-470 MHz RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20009 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20011 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20017 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20030 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:15 Watts, 420-470 MHz RF Power Transistor
PTB20031 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:40 Watts, 420-470 MHz RF Power Transistor