參數(shù)資料
型號： PTB20030
廠商： ERICSSON
英文描述： 15 Watts, 420-470 MHz RF Power Transistor
中文描述： 15瓦，420-470 MHz射頻功率晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 44K
代理商： PTB20030
e
1
0
5
10
15
20
25
30
0.0
0.5
Input Power (Watts)
1.0
1.5
2.0
O
V
CC
= 24 V
I
CQ
= 200 mA
f = 470 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
48
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
6.0
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
63
0.30
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
2.8
°C/W
PTB 20030
15 Watts, 420–470 MHz
RF Power Transistor
Description
The 20030 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 420 to 470 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
15 Watts, 420–470 MHz
Class AB Characteristics
50% Collector Efficiency at 15 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20201
20030
LOTCODE
9/28/98
相關(guān)PDF資料
PDF描述
PTB20031 40 Watts, 420-470 MHz RF Power Transistor
PTB20038 25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor
PTB20051 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20053 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20031 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:40 Watts, 420-470 MHz RF Power Transistor
PTB20038 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:25 Watts, 860-900 MHz Cellular Radio RF Power Transistor
PTB20046 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor
PTB20051 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20053 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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