參數(shù)資料
型號(hào)： PSD835G3V-70UI
廠商： 意法半導(dǎo)體
英文描述： Configurable Memory System on a Chip for 8-Bit Microcontrollers
中文描述： 在8片位微控制器可配置存儲(chǔ)系統(tǒng)
文件頁數(shù)： 70/110頁
文件大小： 570K
代理商： PSD835G3V-70UI
PSD835G2
PSD8XX Family
69
The
PSD835G2
Functional
Blocks
(cont.)
9.5.3 Reset and Power On Requirement
9.5.3.1 Power On Reset
Upon power up the PSD835G2 requires a reset pulse of tNLNH-PO (minimum 1 ms) after
V
CC
is steady. During this time period the device loads internal configurations, clears
some of the registers and sets the Flash into operating mode. After the rising edge of
reset, the PSD835G2 remains in the reset state for an additional tOPR (maximum 120 ns)
nanoseconds before the first memory access is allowed.
The PSD835G2 Flash memory is reset to the read array mode upon power up. The FSi
and CSBOOTi select signals along with the write strobe signal must be in the false
state during power-up reset for maximum security of the data contents and to remove
the possibility of data being written on the first edge of a write strobe signal. Any Flash
memory write cycle initiation is prevented automatically when V
CC
is below VLKO.
9.5.3.2 Warm Reset
Once the device is up and running, the device can be reset with a much shorter pulse of
tNLNH (minimum 150 ns). The same tOPR time is needed before the device is operational
after warm reset. Figure 31 shows the timing of the power on and warm reset.
OPERATING LEVEL
POWER ON RESET
V
CC
RESET
tNLNH
–
PO
tOPR
tNLNH-A
tNLNH
tOPR
WARM
RESET
Figure 31. Power On and Warm Reset Timing
9.5.3.3
I/OPin, Register and PLD Status at Reset
Table 29 shows the I/O pin, register and PLD status during power on reset, warm reset
and power down mode. PLD outputs are always valid during warm reset, and they are
valid in power on reset once the internal PSD configuration bits are loaded. This loading of
PSD is completed typically long before the V
CC
ramps up to operating level. Once the PLD
is active, the state of the outputs are determined by the equations specified in PSDsoft.
相關(guān)PDF資料
PDF描述
PSD835G3V-90B81 Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-90B81I Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-90J Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-90JI Configurable Memory System on a Chip for 8-Bit Microcontrollers
PSD835G3V-90M Configurable Memory System on a Chip for 8-Bit Microcontrollers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD853F2-70J 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24
PSD853F2-70M 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 70ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90J 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90JI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD853F2-90M 功能描述:CPLD - 復(fù)雜可編程邏輯器件 5.0V 1M 90ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*