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參數(shù)資料
| 型號： | PS11032 |
| 元件分類： | 運動控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 8 A, DMA26 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 100K |
| 代理商： | PS11032 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11032
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
SC
Ic(A)
OC
tw (
s)
Over current trip level
Collector current
Short circuit trip level
10
2
0
CURRENT ABNORMALITY PROTECTIVE FUNCTIONS
ARM-SHOOT-THROUGH INTER-LOCK PROTECTIVE FUNCTION
(Fig. 7)
Protection is achieved by monitoring and filtering the N-side
DC-Bus current. The over-current protection is activated (after al-
lowing a filtering time of 10
s) when the line current reaches
250% of the rated load-current IO (rms). Similarly, the short circuit
protection is activated (after allowing a filtering time of 2
s) when
the line current reaches twice the rated collector-current (IC).
When a current trip-level is exceeded (OC or SC), all the N-side
IGBTs are intercepted (turned OFF) and a fault-signal is output.
After the fault-signal output duration (1.8 ms - typ.), the intercep-
tion is Reset at the following OFF input signal. However, since the
fault may be repetitive, it is recommended to stop the system after
the fault-signal is received and check the fault. The trip-level set-
tings described above are summarized in the following figure:
(Fig. 5)
P-Side Input Signal : VCIN(p)
N-Side Input Signal : VCIN(n)
ON
P-Side IGBT Gate : VGE(p)
N-Side IGBT Gate : VGE(n)
a1
b4
b3
b2
b1
a4
a3
a2
0
(Fig. 6)
RECOMMENDED I/O INTERFACE CIRCUIT
Description:
(1) During the ON-State of either of the upper-arm or the lower-arm IGBT, the inter-lock protection circuit blocks any erroneous ON pulses (re-
sulting from input noise) from triggering the other arm IGBT and thus it prevents the arm-shoot-through situation.
(2) When two ON-signals are received for both the upper and the lower arms, the signal received first will be passed to the IGBT and the sec-
ond signal will be blocked. The second signal will be passed to its corresponding IGBT immediately after the first signal is OFF.
Note: This protective function provides no fault signaling output. The Dead-Time has to be set using the micro-controller (CPU).
b1. N-side normal ON-signal
N-side IGBT gate turns ON.
b2. Simultaneous ON-signals
P-side IGBT gate remains OFF.
b3. N-side receives OFF-signal
N-side IGBT gate turns OFF.
b4. Immediately after (b3)
P-side IGBT gate turns ON.
Operation:
a1. P-side normal ON-signal
P-side IGBT gate turns ON.
a2. N-side erroneous ON-signal
N-side IGBT gate remains OFF.
a3. While P-side ON-signal remains
P-side IGBT gate remains ON.
a4. N-side normal ON-signal
N-side IGBT gate turns ON.
UP,VP,WP,UN,VN,WN
Fo
V(amp)
GND(Logic)
ASIPM
5V
VD(15V)
CPU
R
5.1k
5V
10k
0.1nF
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相關(guān)代理商/技術(shù)參數(shù) |
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| PS11033 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11034 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11035 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11036 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11037 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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