參數(shù)資料
型號(hào)： PS11032
元件分類： 運(yùn)動(dòng)控制電子
英文描述： AC MOTOR CONTROLLER, 8 A, DMA26
文件頁數(shù)： 3/5頁
文件大?。?/td> 100K
代理商： PS11032
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11032
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
Condition
Symbol
Item
Ratings
Unit
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M4
Tj
Tstg
TC
VISO
—
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
–20 ~ +125
–40 ~ +125
–20 ~ +100
2500
0.98 ~ 1.47
°C
Vrms
Nm
TOTAL SYSTEM
(Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM
power chips (IGBT & FWDi) is Tj < 150.
Condition
Symbol
Item
Ratings
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Converter Di (1/6)
Case to fin thermal, grease applied (1 Module)
Rth(jc)Q
Rth(jc)F
Rth(jc)FR
Rth(cf)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Min.
°C/W
THERMAL RESISTANCE
Typ.
Max.
—
6.1
4.8
0.074
Unit
Short circuit endurance
(Output, Arm, and Load Short Circuit Modes)
Switching SOA
Tj = 25°C, Input = ON, Ic = 4A, VD = VDB = 15V
(Shunt voltage drop not included)
Tj = 25°C, –IC = 4A
Tj = 25°C, IFR = 5A
VR = VRRM, Tj = 125°C
1/2 Bridge inductive, Input = 5V
0V
VCC = 300V, IC = 4A, Tj = 125°C
VD = 15V, VDB = 15V
Note: ton, toff include delay time of the internal control
circuit.
Condition
Symbol
Item
Ratings
Min.
V
mA
s
Typ.
Max.
—
0.3
—
0.6
0.43
1.6
0.5
0.12
2.9
1.5
8
1.5
0.8
2.5
1.2
—
No destruction
FO output by protection operation
No destruction
No protecting operation
No FO output
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VD = 15V, VDB = 15V unless otherwise noted)
Collector-emitter saturation
voltage
FWDi forward voltage
Converter diode voltage
Converter diode reverse current
Switching times
FWDi reverse recovery time
VCE(sat)
VEC
VFR
IRRM
ton
tc(on)
toff
tc(off)
trr
(Fig. 3)
TC
CASE TEMPERATURE MEASUREMENT POINT
@VCC
≤ 400V, Input = 5V → 0V (One-Shot)
–20°C
≤ Tj (start) ≤ 125°C, 13.5V ≤ VD = VDB ≤ 16.5V
@VCC
≤ 400V, Input = 5V 0V, Tj ≤ 125°C
IC < OC trip level, 13.5V
≤ VD = VDB ≤ 16.5V
Units
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PS11033 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11034 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11035 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11036 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11037 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
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