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參數(shù)資料
| 型號(hào)： | PS11012 |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | AC MOTOR CONTROLLER, 8 A, DFM40 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 539K |
| 代理商： | PS11012 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
1 CBU+
2 CBU–
3 CBV+
4 CBV–
5 CBW+
6 CBW–
7 GND
8 NC
9 VDH
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN
21 VN
22 WN
23 Br
31 R
32 S
33 T
34 P1
35 P2
36 N
37 B
38 U
39 V
40 W
2
± 0.3
54
± 0.5
0.5
± 0.03
0.8
0~0.8
0.4
0.5
62
± 1
20.4
±1
27
±1
84.2
±1
72
±0.8
17.6
±0.5
5.08
± 0.3 ! 9 = 45.72 ± 0.8
4-R2
2-R4
0.5
2
4.14
4
0.5
4
24
0.6
8.5
12
(12.25)
50
6
2
24
44
1 2 34
56
789101112131415161718192021 23
31
32
33
34
35
36
37
38
39
40
22
Terminals Assignment:
2-
φ4
1.2
LABEL
3.5
V
V Control Pin top
portion details
V Main terminal top
portion details
0.3
± 0.5
0
12
0.6
0.35MAX
± 0.5
0
PS11012
INTEGRATED FUNCTIONS AND FEATURES
Converter bridge for 3 phase AC-to-DC power conversion.
Circuit for dynamic braking of motor regenerative energy.
3-phase IGBT inver ter bridge configured by the latest 3rd.
generation IGBT and diode technology.
Inverter output current capability IO (Note 1):
APPLICATION
Acoustic noise-less 0.2kW/AC200V class 3 phase inverter and other motor control applica-
tions
PACKAGE OUTLINES
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : IOP = IO
× √2
(Fig. 1)
Type Name
PS11012
100% load
1.5A (rms)
150% over load
2.25A (rms), 1min
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
For inverter side upper-leg IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short circuit protection (SC).
Bootstrap circuit supply scheme (single drive power supply) and Under voltage protection (UV).
For inverter side lower-leg IGBTs : Drive circuit, Short circuit protection (SC).
Control supply circuit under- & over- voltage protection (OV/UV).
System over temperature protection (OT). Fault output signaling circuit (FO) and Current limit warn-
ing signal output (CL).
For Brake circuit IGBT : Drive circuit
Warning and Fault signaling :
FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
FO2 : N-side control supply abnormality locking (OV/UV).
FO3 : System over-temperature protection (OT).
CL : Warning for inverter current overload condition
For system feedback control : Analogue signal feedback reproducing actual inverter output phase currents (3
φ).
Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PS11013 | 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11014 | 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11015 | 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11017 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 類(lèi)別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類(lèi)型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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