參數(shù)資料
型號(hào): PPC405GP-3FE266CZ
廠商: APPLIEDMICRO INC
元件分類: 微控制器/微處理器
英文描述: Power PC 405GP Embedded Processor
中文描述: 32-BIT, 266 MHz, RISC PROCESSOR, PBGA456
封裝: 35 X 35 MM, PLASTIC, LEAD FREE, EBGA-456
文件頁(yè)數(shù): 46/59頁(yè)
文件大?。?/td> 782K
代理商: PPC405GP-3FE266CZ
405GP – Power PC 405GP Embedded Processor
46
AMCC
Revision 2.03 – September 7, 2007
Data Sheet
Test Conditions
Clock timing and switching characteristics are specified in accordance with
operating conditions shown in the table “Recommended DC Operating
Conditions.” For all signals other than PCI signals, AC specifications are
characterized at OV
DD
= +3V and T
C
= +85°C with the 50pF test load
shown in the figure at right.
For PCI signals there are two different test load circuits, one for the rising
edge and one the falling edge as shown in the figures at right.
DC Electrical Characteristics
Parameter
Symbol
Typical
Maximum
Unit
Active Operating Current (V
DD
)–133MHz
I
DD
TBD
TBD
mA
Active Operating Current (V
DD
)–200MHz
I
DD
550
670
mA
Active Operating Current (V
DD
)–266MHz
I
DD
730
880
mA
Active Operating Current (OV
DD
)–133MHz
I
ODD
TBD
TBD
mA
Active Operating Current (OV
DD
)–200MHz
I
ODD
35
37
mA
Active Operating Current (OV
DD
)–266MHz
I
ODD
37
40
mA
PLL V
DD
Input current
I
PLL
16
23
mA
Active Operating Power–133MHz
P
DD
TBD
TBD
W
Active Operating Power–200MHz
P
DD
1.5
2.0
1
W
Active Operating Power–266MHz
P
DD
2.0
2.6
1
W
Note:
1. Maximum power is characterized at V
DD
= +2.7V, OV
DD
= +3.6V, T
C
= +85
°
C, across the silicon process (worse case to best case),
while running an application designed to maximize power consumption. The specifications at 200MHz correspond to CPU = 200 MHz,
PLB = 100MHz, OPB = EBC = 50MHz, PCI = 33.3MHz. The specifications at 266MHz correspond to CPU = 266.6MHz, PLB
=133.3MHz, OPB = EBC = 66.6MHz, and PCI = 33.3MHz.
2. AV
DD
should be derived from V
DD
using the following circuit:
V
DD
C1
C2
C3
AV
DD
L1
L1 – 2.2
μ
H SMT inductor (equivalent to MuRata
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
C1 – 3.3
μ
F SMT tantalum
C2 –
0.1
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
C3 – 0.01
μ
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
+
AGND
GND
Output
Pin
50pF
All signals other
than PCI
Output
Pin
10pF
25
Ω
Output
Pin
10pF
25
Ω
OV
DD
PCI Rising edge
PCI Falling edge
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