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參數(shù)資料
| 型號(hào)： | PNA2W01M(PN207) |
| 英文描述： | PNA2W01M (PN207) - Darlington Phototransistor |
| 中文描述： | PNA2W01M（PN207） -達(dá)林頓光電晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | PNA2W01M(PN207) |
1
PNA2W01
Darlington Phototransistor
For optical control systems
Features
High sensitivity
Easy to combine with red and infrared light emitting diodes
Small size designed for easier mounting to printed circuit board
Darlington Phototransistors
50
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Sig.IN
R
L
V
CC
Sig.OUT
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
2.8
±
0.2
3.2
±
0.3
0
±
0
0
45
1
2
10.0 min.
Type number : Emitter mark (Black)
10.0 min.
3.2
±
0.3
1.8
1.8
(
(
0
±
0
2
±
0
2
±
0
1
±
0
0
±
R0.9
1.8
1: Collector
2: Emitter
Unit : mm
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
30
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
0.1
3
800
18
200
0.7
max
0.5
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 100 lx
*1
0.5
1.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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