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參數(shù)資料
| 型號： | PNZ163NC(PN163-(NC)) |
| 英文描述： | PNZ163NC (PN163-(NC)) - Silicon NPN Phototransistor |
| 中文描述： | PNZ163NC（PN163 -（北卡羅來納州）） -硅npn型光電晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 314K |
| 代理商： | PNZ163NC(PN163-(NC)) |
1
PNZ163NC
(PN163-(NC))
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t
r
= 4
μ
s (typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
Phototransistors
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
3.0
±
0.3
2-0.5
±
0.15
0.3
±
0.15
1
N
0
2
0
1
3
±
0
1
Unit : mm
1: Collector
2: Emitter
2.54
1
2
1.4
±
0.2
0.5
0.9
1.95
±
0.25
1.1
R0.5
G
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
I
C
P
C
T
opr
T
stg
Ratings
20
20
50
–25 to +85
–30 to +100
Unit
V
mA
mW
C
C
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
S
IR*1
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
max
0.2
40
Unit
μ
A
μ
A
nm
deg.
μ
s
μ
s
V
Dark current
Sensitivity to infrared emitters
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, H = 15
μ
W/cm
2
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100
I
CE(L)
= 3
μ
A, H = 15
μ
W/cm
2
6
850
25
4
4
0.5
*1
Measurements were made using infrared light (
λ
= 940 nm) as a light source.
*2
Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
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