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參數(shù)資料
| 型號： | PN3640 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Switching Transistor |
| 中文描述： | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 97K |
| 代理商： | PN3640 |
P
PNP Switching Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CES
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 100
μ
A, V
BE
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 6.0 V, V
BE
= 0
V
CE
= 6.0 V, V
BE
= 0, T
A
= 65
°
C
V
CE
= 6.0 V, V
BE
= 0
12
12
12
4.0
V
V
V
V
μ
A
μ
A
nA
0.01
1.0
10
I
B
Base Current
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 0.3 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
=65
°
C
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
30
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.3
0.2
0.6
0.25
0.95
1.0
1.5
V
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.75
0.8
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
V
= 5.0 V, I
E
= 0,
f = 1.0 MHz
V
= 0.5 V, I
C
= 0,
f = 1.0 MHz
500
MHz
C
obo
Output Capacitance
3.5
pF
C
ibo
Input Capacitance
3.5
pF
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
t
on
Turn-On Time
V
CC
= 6.0 V, V
BE(
off
)
= 1.9 V,
I
C
= 50 mA, I
B1
= 5.0 mA
V
CC
= 6.0 V, I
C
= 50 mA,
I
B1
= I
B2
= 5.0 mA
10
20
20
12
25
ns
ns
ns
ns
ns
V
CC
= 6.0 V, V
BE(
off
)
= 1.9 V,
I
C
= 50 mA, I
B1
= 5.0 mA
V
CC
= 1.5 V, I
C
= 10 mA,
I
B1
= I
B2
= 0.5 mA
60
ns
t
off
Turn-Off Time
V
CC
= 6.0 V, V
BE(
off
)
= 1.9 V,
I
C
= 50 mA, I
B1
= 5.0 mA
V
CC
= 1.5 V, I
C
= 10 mA,
I
B1
= I
B2
= 0.5 mA
35
ns
75
ns
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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| PN3640_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Switching Transistor |
| PN3640_D26Z | 功能描述:兩極晶體管 - BJT Switching Transistor PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3640_D27Z | 功能描述:兩極晶體管 - BJT PNP Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3640_D75Z | 功能描述:兩極晶體管 - BJT PNP Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PN3640_J18Z | 功能描述:兩極晶體管 - BJT PNP Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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