參數資料
型號： PN3646
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： NPN Switching Transistor
中文描述： 300 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： TO-92, 3 PIN
文件頁數： 1/4頁
文件大?。?/td> 28K
代理商： PN3646
2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
P
Absolute Maximum Ratings *
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage *
BV
(BR)CES
Collector-Emitter Breakdown Voltage
BV
(BR)CBO
Collector-Base Breakdown Voltage
BV
(BR)EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cutoff Current
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Parameter
Value
15
40
5.0
300
- 55 ~ 150
Units
V
V
V
mA
°
C
- Continued
Test Condition
Min.
Max.
Units
I
C
= 10mA, I
B
= 0
I
C
= 100
μ
A, V
BE
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 20V, V
BE
= 0
V
CE
= 20V, V
BE
= 0, T
a
= 65
°
C
15
40
40
5.0
V
V
V
V
μ
A
μ
A
0.5
3.0
On Characteristics *
h
FE
DC Current Gain
V
CE
= 0.4V, I
C
= 30mA
V
CE
= 0.5V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 3.0mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 3.0mA
30
25
15
120
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.2
0.28
0.5
0.95
1.2
1.7
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
0.73
Small Signal Characteristics
C
cb
Collector-Base Capacitance
C
eb
Emitter-Base Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 5.0V, I
E
= 0, f = 1MHz
V
CB
= 5.0V, I
C
= 0, f = 1MHz
I
C
= 300mA, V
CE
= 10V, f = 100MHz
5.0
8.0
pF
pF
3.5
PN3646
TO-92
NPN Switching Transistor
Sourced from process 22.
1. Emitter 2. Base 3. Collector
1
相關PDF資料
PDF描述
PN3646 Small Signal Transistors
PN3904 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | TO-92
BEL100N FUSE FAST 250MA SHORT UL TE5
BEL100P FUSE FAST 400MA SHORT UL TE5
BEL187 FUSE FAST 800MA SHORT UL TE5
相關代理商/技術參數
參數描述
PN3646_D26Z 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PN3646_D27Z 功能描述:兩極晶體管 - BJT NPN Switching Trans RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PN3646_D74Z 功能描述:兩極晶體管 - BJT NPN Switching Trans RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PN3646_D75Z 功能描述:兩極晶體管 - BJT NPN Switching Trans RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PN3646_Q 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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