參數(shù)資料
型號: PN2907A-AP
廠商: 意法半導(dǎo)體
英文描述: SMALL SIGNAL PNP TRANSISTOR
中文描述: 小信號PNP晶體管
文件頁數(shù): 2/8頁
文件大小: 119K
代理商: PN2907A-AP
PN2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–60
Vdc
Collector–Base Breakdown Voltage
(I
C
= –10 Adc, I
E
= 0)
V
(BR)CBO
–60
Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 Adc, I
C
= 0)
V
(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
I
CEX
–50
nAdc
Collector Cutoff Current
(V
CB
= –50 Vdc, I
E
= 0)
(V
CB
= –50 Vdc, I
E
= 0, T
A
= 150
°
C)
I
CBO
–0.01
–10
μ
Adc
Base Current
(V
CE
= –30 Vdc, V
EB(off)
= –0.5 Vdc)
I
B
–50
nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= –0.1 mAdc, V
CE
= –10 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –10 Vdc)
(I
C
= –10 mAdc, V
CE
= –10 Vdc)
(I
C
= –150 mAdc, V
CE
= –10 Vdc) (Note 1.)
(I
C
= –500 mAdc, V
CE
= –10 Vdc) (Note 1.)
h
FE
75
100
100
100
50
300
Collector–Emitter Saturation Voltage (Note 1.)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
V
CE(sat)
–0.4
–1.6
Vdc
Base–Emitter Saturation Voltage (Note 1.)
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
V
BE(sat)
–1.3
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
(I
C
= –50 mAdc, V
CE
= –20 Vdc, f = 100 MHz)
f
T
200
MHz
Output Capacitance
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
8.0
pF
Input Capacitance
(V
EB
= –2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
CC
= –30 Vdc, I
C
= –150 mAdc,
Ad ) (Fi
I
B1
= –15 mAdc) (Figures 1 and 5)
t
on
45
ns
Delay Time
t
d
10
ns
Rise Time
t
r
40
ns
Turn–Off Time
(V
CC
= –6.0 Vdc, I
C
= –150 mAdc,
Ad ) (Fi
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
off
100
ns
Storage Time
t
s
80
ns
Fall Time
t
f
30
ns
1. Pulse Test: Pulse Width
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
300 s, Duty Cycle
2%.
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