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參數(shù)資料
| 型號： | PN116 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon planar type |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | LSTFR103-001, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 83K |
| 代理商： | PN116 |
Phototransistors
PNA1605F
(PN116)
Silicon planar type
1
Publication date: April 2004
SHE00003BED
For optical control systems
■
Features
High sensitivity
Wide directivity characteristics, suited for detecting GaAs LEDs:
θ
=
70
°
(typ.)
Fast response: t
r
, t
f
=
8
μ
s (typ.)
Side-view type package
■
Absolute Maximum Ratings
T
a
=
25
°
C
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time
t
f
:
Fall time
V
CC
Sig. out
10%
90%
Sig. in
t
d
t
r
t
f
3.5
±0.15
4.5
±0.15
1.6
±0.15
0.8
±0.1
2.1
±0.15
N
3-0.45
±0.2
0.45
±0.2
1
(
1
±
3
±
1
1.27
1
2
3
1.27
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
1: Emitter
2: Collector
3: Base
LSTFR103-001 Package
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
V
CEO
20
V
Collector-base voltage (Emitter open)
V
CBO
30
V
Emitter-collector voltage (Base open)
V
ECO
V
EBO
5
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
10
mA
Collector power dissipation
P
C
T
opr
100
mW
Operating ambient temperature
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
T
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1
I
CE(L)
I
CEO
λ
p
θ
V
CE
=
10 V, L
=
100 lx
V
CE
=
10 V
V
CE
=
10 V
The angle from which photocurrent
becomes 50%
0.2
0.8
mA
Dark current
0.05
2.00
μ
A
Peak emission wavelength
900
nm
°
Half-power angle
70
Rise time
*2
Fall time
*2
Collector-emitter saturation voltage
*1
t
r
t
f
V
CC
=
10 V, I
CE(L)
=
1 mA, R
L
=
100
8
μ
s
μ
s
9
V
CE(sat)
I
CE(L)
=
1 mA, L
=
1
000 lx
0.3
0.6
V
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
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