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參數(shù)資料
| 型號(hào)： | PN155 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 57K |
| 代理商： | PN155 |
1
PNZ155
(PN155)
Silicon NPN Phototransistor
For optical control systems
Phototransistors
Unit : mm
0.8
±
0.1
3.5
±
0.15
4.5
±
0.15
2.54
±
0.2
0.45
±
0.2
2-0.45
±
0.15
2-1.2
±
0.3
1.6
±
0.15
2.1
±
0.15
N
(
1
±
0
3
±
0
1
1
2
1: Emitter
2: Collector
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
10
100
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)*1
λ
P
θ
t
r
, t
f*2
V
CE(sat)*1
Conditions
min
typ
0.01
0.2
800
70
4
0.2
max
1
Unit
μ
A
mA
nm
deg.
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
0.05
0.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Flat type plastic package
Note) The part number in the parenthesis shows conventional part number.
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