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參數(shù)資料
| 型號： | PMWD30UN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual uTrenchMOS ultra low level FET |
| 中文描述： | 5000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB |
| 封裝： | PLASTIC, MO-153, TSSOP-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 242K |
| 代理商： | PMWD30UN |
Philips Semiconductors
PMWD30UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
6 of 12
9397 750 10835
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
003aaa276
0
1
2
3
4
0
0.5
1
1.5
2
VDS (V)
ID
(A)
1.0 V
1.1 V
1.2 V
4.5 V
VGS = 1.3 V
003aaa277
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
VGS (V)
ID
(A)
T
j
= 150
°
C
25
°
C
003aaa278
0
25
50
75
100
0
1
2
3
4
ID (A)
RDSon
(m
)
4.5 V
1.3 V
2.5 V
1.2 V
VGS = 1.8 V
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25
°
C
)
-----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWS-2T | 制造商:ALLSTATES 功能描述: 制造商:All-States Inc 功能描述: |
| PM-WT01 | 制造商:PMI 制造商全稱:PMI 功能描述:WIDEBAND RF PULSE COUPLING TRANSFORMERS |
| PM-WT02 | 制造商:PMI 制造商全稱:PMI 功能描述:WIDEBAND RF PULSE COUPLING TRANSFORMERS |
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