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參數(shù)資料
| 型號： | PMEGXX10EJ |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 1 A very low VF MEGA Schottky barrier rectifiers |
| 中文描述： | 1安很低正向壓降MEGA肖特基勢壘整流器 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 85K |
| 代理商： | PMEGXX10EJ |
2004 Jun 14
3
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMEGXX10BEA
PMEGXX10BEV
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
SOD323
SOT666
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
20
30
40
1
3.5
10
V
V
V
A
A
A
I
F
I
FRM
I
FSM
T
s
≤
55
°
C; note 1
t
p
≤
1 ms;
δ ≤
0.5; note 2
t
p
= 8 ms; square wave;
note 2
note 3
note 3
T
j
T
amb
T
stg
junction temperature
operating ambient temperature
storage temperature
65
65
150
+150
+150
°
C
°
C
°
C
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