參數(shù)資料
型號: PMEGXX10EJ
廠商: NXP Semiconductors N.V.
英文描述: 1 A very low VF MEGA Schottky barrier rectifiers
中文描述: 1安很低正向壓降MEGA肖特基勢壘整流器
文件頁數(shù): 2/11頁
文件大?。?/td> 85K
代理商: PMEGXX10EJ
2004 Jun 14
2
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
Forward current: 1 A
Reverse voltages: 20 V, 30 V, 40 V
Very low forward voltage
Ultra small and very small plastic SMD package
Power dissipation comparable to SOT23.
APPLICATIONS
High efficiency DC-to-DC conversion
Voltage clamping
Protection circuits
Low voltage rectification
Blocking diodes
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PMEG2010BEA
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
V1
V2
V3
G6
G5
G4
SYMBOL
PARAMETER
MAX.
UNIT
I
F
V
R
forward current
reverse voltage
1
20; 30; 40
A
V
PIN
DESCRIPTION
PMEGXX10BEA
(see Fig.1)
1
2
cathode
anode
PMEGXX10BEV
(see Fig.2)
1, 2, 5, 6
3, 4
cathode
anode
sym001
1
2
Top view
2
1
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
1
2
3
4
6
5
Top view
sym038
1, 2
5, 6
3, 4
Fig.2 Simplified outline (SOT666) and symbol.
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