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| 型號： | PMD19D100 |
| 英文描述： | 2.6A Low Loss Ideal Diode in ThinSOT; Package: SOT; No of Pins: 5; Temperature Range: -40°C to +125°C |
| 中文描述： | 晶體管|晶體管|達林頓|進步黨| 100V的五（巴西）總裁| 50A條一（c）|至3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 18K |
| 代理商： | PMD19D100 |
PMD18D100
LA B
S E M E
Prelim. 10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS
(TJ= 0 to 200
°
C, unless otherwise stated)
Collector - Emitter
Saturation Voltage*
Base - Emitter Turn-on
Voltage*
Base - Emitter Saturation*
DC Current Gain*
Forward Bias Secondary
Breakdown Current
OFF CHARACTERISTICS
Collector Emitter Breakdown
Voltage (Base Open)*
Collector Emitter Sustaining
Voltage*
Emitter Base Leakage
Current
Collector Emitter Leakage
Current
DYNAMIC CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Common Emitter Short
Circuit Forward Transfer
Ratio
I
C
= 30A
I
B
= 120mA
I
C
= 30A
V
CE
= 3V
I
C
= 30A
I
C
= 30A
I
B
= 120mA
V
CE
= 3V
T
j
= 25
°
C
T
A
= 25
°
C
V
CE
= 30V
1 sec non-repetitive pulse
I
CE
= 100mA
T
j
= 25
°
C
I
CE
= 100mA
R
BE
= 2.2K
W
V
EB
= 5V
I
C
= 0A
V
CE
= 67V
R
BE
= 2.2K
W
V
CB
= 10V
f = 1MHz
I
C
=
18
A
f = 1KHz
I
E
=
0
A
T
j
= 25
°
C
V
CE
= 3V
T
j
= 25
°
C
I
C
=
18
A
f = 1MHz
V
CE
= 3V
T
j
= 25
°
C
2
2.8
2.8
1000
20000
10.0
100
100
6.0
15.0
1200
300
4
V
V
V
A
V
V
mA
mA
pF
—
* Pulse Tested with pulse width
￡
300
m
s, and duty cycle < 2%
Parameter
ON CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Units
V
CE(sat)
V
BE(on)
V
BE(sat)
h
FE
Is/b
V
(BR)CEO
V
(SUS)CER
I
EBO
I
CER
C
ob
h
fe
h
fe
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PMD19D80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 50A I(C) | TO-3 |
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| PMD19K60 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON POWER DARINGTON TRANSISTORS |
| PMD19K80 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SILICON POWER DARINGTON TRANSISTORS |
| PMD2001D | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN/PNP 40V SSOT-6 |
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