參數(shù)資料
型號: PMD19D100
英文描述: 2.6A Low Loss Ideal Diode in ThinSOT; Package: SOT; No of Pins: 5; Temperature Range: -40°C to +125°C
中文描述: 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 100V的五(巴西)總裁| 50A條一(c)|至3
文件頁數(shù): 1/2頁
文件大?。?/td> 18K
代理商: PMD19D100
PMD18D100
LA B
S E M E
Prelim. 10/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN DARLINGTON
POWER TRANSISTOR
FEATURES
TO3 PACKAGE
100V
100A PEAK
300 WATTS
V
CBO
V
CEO
V
EBO
I
C
Collector – Base Voltage (Open Emitter)
Collector – Emitter Voltage (Open Base)
Emitter – Base Voltage (Open Collector)
Collector Current Continuous
Peak
Base Current
Total Power Dissipation at T
case
= 50°C
Operating Junction and Storage Temperature
Thermal Resistance
I
B
P
D
T
J,
T
STG
q
JC
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Case is collector
.
B
E
4.2
26.6 max.
3
3
1
10.9
2.5
1
12.8
2
9.0 max.
TO3 Package.
DESCRIPTION
The PMD18D100 is an NPN Darlington
Power Transistor in a hermetic TO3 package.
The device is a monolothic epitaxial structure
with built in base-emitter shunt resistor
100V
100V
5V
50A
100A
1.5A
300W
-65 to 200
°
C
0.4
°
C/W
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