參數(shù)資料
型號(hào): PM6680TR
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: 0.4 A DUAL SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, QCC32
封裝: 5 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, VFQFPN-32
文件頁數(shù): 39/49頁
文件大?。?/td> 2931K
代理商: PM6680TR
Device description
PM6680
44/49
possible. Place the synchronous diode D near the LS MOSFET. Connect the LS
MOSFET drain to the switching node with a short trace.
Place input capacitors near HS MOSFET drain. It is recommended to use the same
input voltage plan for both the switching sections, in order to put together all input
capacitors.
Place all the sensitive analog signals (feedbacks, voltage reference, current sense
paths) on the bottom side of the board or in an inner layer. Isolate them from the power
top side with a signal ground layer, SGND. Connect the SGND and PGND plans only in
one point (a multiple vias connection is preferable to a 0 ohm resistor connection) near
the PGND device pin. Place the device on the top or on the bottom size and connect
the exposed pad and the SGND pins to the SGND plan (see Figure 41).
Figure 41.
Current paths, ground connection and driver traces layout
As general rule, make the high side and low side drivers traces wide and short. The
high side driver is powered by the bootstrap circuit. It's very important to place
capacitor CBOOT and diode DBOOT as near as possible to the HGATE pin (for
example on the layer opposite to the device). Route HGATE and PHASE traces as near
as possible in order to minimize the area between them.
The Low side gate driver is powered by the 5V linear regulator output. Placing PGND
and LGATE pins near the low side MOSFETs reduces the length of the traces and the
crosstalk noise between the two sections.
The linear regulator output LDO5 is referred to SGND as long as the reference voltage
Vref. Place their output filtering capacitors as near as possible to the device.
Place input filtering capacitors near VCC and VIN pins.
It would be better if the feedback networks connected to COMP, FB and OUT pins are
"referred" to SGND in the same point as reference voltage Vref. To avoid capacitive
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