參數(shù)資料
型號(hào)： PM6680A
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： 0.4 A DUAL SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, QCC32
封裝： 5 X 5 MM, LEAD FREE, VFQFPN-32
文件頁(yè)數(shù)： 27/48頁(yè)
文件大?。?/td> 1932K
代理商： PM6680A
PM6680A
Design guidelines
33/48
9.5
Power MOSFETS
Logic-level MOSFETs are recommended, since low side and high side gate drivers are
powered by LDO5. Their breakdown voltage VBRDSS must be higher than VINmax.
In notebook applications, power management efficiency is a high level requirement. The
power dissipation on the power switches becomes an important factor in switching
selections. Losses of high-side and low-side MOSFETs depend on their working conditions.
The power dissipation of the high-side MOSFET is given by:
Equation 18
Maximum conduction losses are approximately:
Equation 19
where RDSon is the drain-source on resistance of the high side MOSFET.
Switching losses are approximately:
Equation 20
where ton and toff are the switching times of the turn on and turn off phases of the MOSFET.
As general rule, high side MOSFETs with low gate charge are recommended, in order to
minimize driver losses.
Below there is a list of possible choices for the high side MOSFET.
The power dissipation of the low side MOSFET is given by:
Equation 21
Maximum conduction losses occur at the maximum input voltage:
Table 13.
High side MOSFET manufacturer
Manufacturer
Type
Gate charge (nC)
Rated reverse voltage (V)
ST
STS5NF60L
25
60
switching
conduction
DHighSide
P
+
=
2
LOAD
min
IN
OUT
DSon
conduction
(max)
I
V
R
P
×
=
2
f
t
)
2
I
(max)
I
(
V
2
f
t
)
2
I
(max)
I
(
V
P
sw
off
L
LOAD
IN
sw
on
L
LOAD
IN
switching
×
+
×
+
×
×
=
conduction
DLowSide
P
=
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PM6680TR 功能描述:DC/DC 開(kāi)關(guān)控制器 No Rsense dual StepDwn Controller RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開(kāi)關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
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