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參數(shù)資料
| 型號： | PM6675ASTR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 3 A SWITCHING CONTROLLER, QCC24 |
| 封裝： | 4 X 4 MM, LEAD FREE, VFQFPN-24 |
| 文件頁數(shù)： | 20/48頁 |
| 文件大?。?/td> | 2481K |
| 代理商： | PM6675ASTR |
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PM6675AS
Device description
27/48
7.1.5
Current sensing and current limit
The PM6675AS switching controller employes a valley current sensing algorithm to properly
handle the current limit protection and the inductor current zero-crossing information. The
current is sensed during the conduction time of the low-side MOSFET. The current sensing
element is the low-side MOSFET on-resistance. The sensing scheme is visible in Figure 30.
Figure 30.
Current sensing scheme
An internal 100
A current source is connected to CSNS pin that is also the non-inverting
input of the positive current limit comparator. When the voltage drop developed across the
sensing parameter equals the voltage drop across the programming resistor RILIM, the
controller skips subsequent cycles until the overcurrent is detected or the output UV
protection latches off the device (see par. Chapter 7.1.4 UV and OV Protections).
Referring to Figure 30, the RDSon sensing technique is tailored to all low cost, high
efficiency applications.
It must be taken into account that the current limit circuit actually regulates the inductor
valley current. This means that RILIM must be calculated to set a limit threshold given by the
maximum DC output current plus half of the inductor ripple current:
Equation 21
where RSENSE is the sensing device (RDSon).
The PM6675AS provides also a fixed negative current limit to prevent excessive reverse
inductor current when the switching section sinks current from the load in forced-PWM (3rd
quadrant working conditions). This negative current limit threshold is measured between
PHASE and PGND pins, comparing the drop magnitude on PHASE pin with an internal
110mV fixed voltage.
RILIM
HGATE
PHASE
CSNS
LGATE
PGND
SENSE
ILIM
CL
R
A
100
I
=
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