參數(shù)資料
型號(hào)： PM6670STR
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： 3 A SWITCHING CONTROLLER, QCC24
封裝： 4 X 4 MM, LEAD FREE, VFQFPN-24
文件頁(yè)數(shù)： 41/54頁(yè)
文件大?。?/td> 742K
代理商： PM6670STR
Application information
PM6670S
46/54
Doc ID 14432 Rev 4
Tested low-side MOSFETs are listed in Table 17.
Dual N-MOS can be used in applications with lower output current.
shows some suitable dual MOSFETs for applications requiring about 3 A.
8.1.5
Diode selection
A rectifier across the synchronous switch is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on.
Moreover it increases the efficiency of the system.
Choose a schottky diode as long as its forward voltage drop is very little (0.3 V). The reverse
voltage should be greater than the maximum input voltage VINmax and a minimum recovery
reverse charge is preferable. Table 19 shows some evaluated diodes.
Table 17.
Evaluated low-side MOSFETs
Manufacturer
Type
RDSon (mΩ)
CGD \ CGS
Rated reverse voltage (V)
ST
STS12NH3LL
13.5
0.069
30
ST
STS25NH3LL
4.0
0.011
30
IR
IRF7811
24
0.054
30
Table 18.
Suitable dual MOSFETs
Manufacturer
Type
RDSon (mΩ)
Gate charge (nC)
Rated reverse voltage (V)
ST
STS8DNH3LL
25
10
30
IR
IRF7313
46
33
30
Table 19.
Evaluated recirculation rectifiers
Manufacturer
Type
Forward
voltage (V)
Rated reverse
voltage (V)
Reverse current (
μA)
ST
STPS1L30M
0.34
30
0.00039
ST
STPS1L30A
0.34
30
0.00039
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