參數(shù)資料
型號： PM6641
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： SWITCHING REGULATOR, 1100 kHz SWITCHING FREQ-MAX, QCC48
封裝： 7 X 7 MM, 1 MM HEIGHT, LEAD FREE, VQFP-48
文件頁數(shù)： 5/47頁
文件大?。?/td> 2254K
代理商： PM6641
PM6641
Electrical characteristics
Doc ID 13510 Rev 3
13/47
Symbol
Parameter
Test condition
Values
Unit
Min
Typ
Max
VTT LDO section – DDR2/3 rails
PG_VTT_TH
Power Good upper threshold
106
110
114
%
Power Good lower threshold
86
90
94
%
ILDOIN,ON
LDO input bias current in full-
ON state
EN_1S8 = EN_VTT = +5 V,
no load on VTT
110
μA
ILDOIN,STR
LDO input bias current in
suspend-to-RAM state
EN_1S8 = +5 V, EN_VTT = 0 V,
no load on VTT
10
ILDOIN,STD
LDO input bias current in
suspend-to-disk state
EN_1S8 = EN_VTT = 0 V,
no load on VTT
3
IVTTFB, BIAS VTTFB bias current
EN_1S8 = EN_VTT = +5 V,
VVTTFB = VVOUT_1S8 /2
1
μA
IVTTFB, LEAK VTTFB leakage current
EN_1S8 = +5 V, EN_VTT = 0 V,
VVTTFB = VVOUT_1S8 /2
1
IVTT,LEAK
VTT leakage current
EN_1S8 = +5 V, EN_VTT = 0 V,
VVTT = VVOUT_1S8 /2
-10
10
VVTT
LDO linear regulator output
voltage (DDR2)
EN_1S8 = EN_VTT = +5 V,
IVTT 0 A, VLDOIN = 1.8 V
0.9
V
LDO linear regulator output
voltage (DDR3)
EN_1S8 = EN_VTT = +5 V,
IVTT = 0 A, VLDOIN = 1.5 V
0.75
LDO output accuracy respect to
VTTREF, VLDOIN =1.8 V
EN_1S8 = EN_VTT = +5 V,
-1 mA < IVTT < 1 mA
-20
20
mV
EN_1S8 = EN_VTT = +5 V,
-1 A < IVTT < 1 A
-25
25
EN_1S8 = EN_VTT = +5 V,
-2 A < IVTT < 2 A
-35
35
IVTT,CL
LDO source current limit
VVTT < 1.10*(VVOUT_1S8 /2)
2
2.3
3
A
VVTT > 1.10*(VVOUT_1S8 /2)
1
1.25
1.5
LDO sink current limit
VVTT > 0.90*(VVOUT_1S8 /2)
-3
-2.3
-2
VVTT < 0.90*(VVOUT_1S8 /2)
-1.5
-1.25
-1
VTTREF section – DDR2/3 rails
VVTTREF
VTTREF output voltage
IVTTREF = 0A, VVOUT_1S8 = 1.8 V
0.9
V
VTTREF output voltage
accuracy relative to
VVOUT_1S8/2
-15 mA < IVTTREF < +15 mA,
VVOUT_1S8 = 1.8 V
-2
2
%
IVTTREF
VTTREF short circuit source
current
VVOUT_1S8 = 1.8 V, VVTTREF = 0 V
40
mA
VTTREF short circuit sink
current
VVOUT_1S8 = 1.8 V, VVTTREF = 1.8 V
-40
Table 6.
Electrical characteristics (continued)
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