參數(shù)資料
型號(hào): PM50RLA120
廠商: Mitsubishi Electric Corporation
英文描述: FLAT-BASE TYPE INSULATED PACKAGE
中文描述: 平性基地型絕緣包裝
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 98K
代理商: PM50RLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2003
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
20 ~ +100
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-2)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
UP
IGBT
28.3
7.7
VP
WP
UN
VN
WN
Br
FWDi
28.4
1.5
IGBT
65.0
7.7
FWDi
64.9
1.5
IGBT
87.0
7.7
FWDi
86.9
1.5
IGBT
39.3
5.7
FWDi
39.2
3.5
IGBT
54.0
5.7
FWDi
54.1
3.5
IGBT
76.0
5.7
FWDi
76.1
3.5
IGBT
17.9
10.5
FWDi
19.3
4.3
arm
axis
X
Y
(Unit : mm)
Bottom view
Top view
B
N
P
U
V
W
T
C
(Base plate)
Table1 : T
C
measurement point of just under the chips.
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min.
0.5
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
I
C
= 50A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 50A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 50A
V
CIN
= 0V, Pulsed
(Fig. 1)
V
mA
V
μ
s
Unit
0.26
0.39
0.36
0.60
0.34
0.51
0.47
0.78
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Brake IGBT
Brake FWDi
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Brake IGBT
Brake FWDi
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-2)
(Note-2)
(Note-2)
(Note-2)
Symbol
Condition
Unit
Min.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
(Note-1) T
C
measurement point is just under the chips (Bottom view).
If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) T
C
measurement point is as shown below (Top view).
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