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參數(shù)資料
| 型號(hào)： | PM50CSE060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平基平基型絕緣包裝 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | PM50CSE060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
V
CES
±
I
C
±
I
CP
P
C
T
j
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
V
D
= 15V, V
CIN
= 15V
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
V
A
A
W
°
C
MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
600
50
100
125
–
20 ~ +150
Unit
INTERNAL FUNCTIONS BLOCK DIAGRAM
V
FO
I
FO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol
Parameter
Condition
Ratings
Unit
Applied between : V
UP1
-V
UPC
V
VP1
-V
VPC
, V
WP1
-V
WPC
, V
N1
-V
NC
Applied between : U
P
-V
UPC
, V
P
-V
VPC
W
P
-V
WPC
, U
N
V
N
W
N
-V
NC
Applied between : F
O
-V
NC
Sink current at F
O
terminal
20
20
V
D
V
CIN
V
V
W
P
V
WP1
V
WPC
U
N
Fo
N
W
V
P
U
V
P
V
VP1
V
VPC
U
P
V
UP1
V
UPC
W
N
V
N1
V
NC
V
N
Rfo
Th
Gnd In
Fo Vcc
Gnd
Si Out
Gnd In
Fo Vcc
Gnd
Si Out
Gnd In
Fo Vcc
Gnd
Si Out
Gnd In
Fo Vcc
Gnd
Si Out
Gnd In
Fo Vcc
Gnd
Si Out
Gnd In
Fo Vcc
Gnd
Si Out
N
C
Rfo=1.5k
N
C
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|---|---|
| PM50CSE120 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
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| PM50CTJ060-3 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INSULATED PACKAGE FLAT-BASE TYPE |
| PM50CTK060 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50RHA060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
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