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參數(shù)資料
| 型號(hào)： | PM50B5LA060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 182K |
| 代理商： | PM50B5LA060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2005
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
2 3 57
10
–2
2 3 57
10
–1
10
–5
2 3 57
10
–4
2 3 57
2 3 57
10
0
2 3 57
10
1
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
2 3 57
10
–2
2 3 57
10
–1
10
–5
2 3 57
10
–4
2 3 57
2 3 57
10
0
2 3 57
10
1
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
2 3 57
10
–2
2 3 57
10
–1
10
–5
2 3 57
10
–4
2 3 57
2 3 57
10
0
2 3 57
10
1
0
0.5
1
1.5
2
2.5
10
0
10
2
7
5
3
2
10
1
7
5
3
2
T
j
= 25
°
C
T
j
= 125
°
C
V
D
= 15V
10
0
2
3
5 7
10
1
2
3
5 7
10
2
10
–2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
–1
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
I
rr
V
CC
= 300V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
t
rr
10
0
2
3
5 7
10
1
2
3
5 7
10
2
10
–3
10
–2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
E
rr
V
CC
= 300V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
Single Pulse
Per unit base = R
th(j – c)Q
= 0.95
°
C/W
Single Pulse
Per unit base = R
th(j – c)F
= 0.95
°
C/W
Single Pulse
Per unit base = R
th(j – c)F
= 1.61
°
C/W
F
F
(
FWDi FORWARD VOLTAGE V
FM
(V)
FWDi FORWARD VOLTAGE CHARACTERISTICS
(Upper Arm · TYPICAL)
FWDi REVERSE RECOVERY CHARACTERISTICS
(Upper Arm · TYPICAL)
FWDi FORWARD CURRENT I
F
(A)
R
r
(
μ
s
R
r
(
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(Upper Arm · TYPICAL)
R
r
(
FWDi FORWARD CURRENT I
F
(A)
TIME
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
N
T
t
TIME
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART · Upper Arm)
N
T
t
TIME
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART · Lower Arm)
N
T
t
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PM50B5LA060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5LB060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM50B5LB060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B6L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:600V; Leaded Process Compatible:Yes; Module Configuration:Six; Package / Case:90 x 50mm Module ;RoHS Compliant: Yes |
| PM50B6LA060 | 功能描述:MOD PV-IPM H-BRDG/2CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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