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| 型號(hào)： | PIP8000FHN/N1 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC28 |
| 封裝： | 6 X 6 MM, 0.85 MM HEIGHT, PLASTIC, MO-220, SOT788-1, HVQFN-28 |
| 文件頁(yè)數(shù)： | 3/26頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | PIP8000FHN/N1 |
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PIP8000FHN_2
NXP B.V. 2009. All rights reserved.
Preliminary data sheet
Rev. 02 — 6 July 2009
11 of 26
NXP Semiconductors
PIP8000FHN
Digital power supervisor
8.
Limiting values
[1]
The following applies to Table 8:
a) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any conditions other than those described in Table 9, Characteristics and Table 8, Limiting values of this
specication are not implied.
b) This product includes circuitry specically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions will be taken to avoid exceeding the rated maximum.
c) Parameters are valid over operating temperature range unless otherwise specied. All voltages are with respect to VSS unless
otherwise noted.
9.
Characteristics
Table 8.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Min
Max
Unit
Tamb
ambient temperature
operating bias
55
+125
°C
Tstg
storage temperature
65
+150
°C
IOH
HIGH-level output current
per I/O pin
-
20
mA
IOL
LOW-level output current
per I/O pin
-
20
mA
II/O(tot)(max)
maximum total I/O current
-
100
mA
Ptot
total power dissipation
based on package heat
transfer, not device power
consumption
-
1.5
W
Table 9.
DC electrical characteristics
VDD = 2.4 V to 3.6 V unless otherwise specied.
Tamb = 40 °C to +85 °C for industrial applications, unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
IDD
supply current
VDD = 3.6 V
-
14
23
mA
VDD = 3.6 V, Idle mode
-
5
7
mA
VDD = 3.6 V, Power-down
mode
-55
80
A
IDD(tot)
total supply current
VDD = 3.6 V, Power-down
mode
[2] -1
5
A
(dV/dt)r
rise rate of change of voltage
of VDD
-
2
mV/
s
(dV/dt)f
fall rate of change of voltage
of VDD
-
50
mV/
s
VDDR
data retention voltage
1.5
-
V
Vth(HL)
HIGH to LOW threshold
voltage
except SCL, SDA
0.22VDD
0.4VDD
-V
VIL
LOW-level input voltage
SCL, SDA only
0.5
-
0.3VDD
V
Vth(LH)
LOW to HIGH threshold
voltage
except SCL, SDA
-
0.6VDD
0.7VDD
V
VIH
HIGH-level input voltage
SCL, SDA only
0.7VDD
-
5.5
V
Vhys
hysteresis voltage
port 1
-
0.2VDD
-V
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