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參數(shù)資料
| 型號： | PIP3102-R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | LOGIC LEVEL TOPFET |
| 中文描述： | 44 A BUF OR INV BASED PRPHL DRVR, PSSO5 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 156K |
| 代理商： | PIP3102-R |
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
Thermal resistance
Junction to mounting base
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
-
-
1.2
1.39
K/W
OUTPUT CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified.
SYMBOL
PARAMETER
Off-state
V
(CL)DSS
Drain-source clamping voltage
CONDITIONS
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 4 A; tp
≤
300
μ
s;
δ
≤
0.01
V
PS
= 0 V; V
DS
= 40 V
MIN.
TYP.
MAX.
UNIT
50
50
-
-
-
70
70
100
10
V
V
μ
A
μ
A
60
-
0.1
I
DSS
Drain source leakage current
1
T
mb
= 25C
On-state
t
p
≤
300
μ
s;
δ
≤
0.01; V
PS
≥
4 V
I
DM
= 10 A; V
IS
≥
4.4 V
R
DS(ON)
Drain-source resistance
-
-
-
50
28
m
m
T
mb
= 25C
21
INPUT CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified.
SYMBOL
PARAMETER
Normal operation
V
IS(TO)
Input threshold voltage
2
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
D
= 1 mA
0.6
1.1
-
5.5
-
-
2.6
2.1
100
8.5
-
V
V
μ
A
V
k
T
mb
= 25C
1.6
16
6.4
1.7
I
IS
V
(CL)IS
R
IG
Input current
Input clamping voltage
Internal series resistance
3
Overload protection latched
Input current
V
IS
= 5 V
I
I
= 1 mA
to gate of power MOSFET
V
PS
≥
4 V
V
IS
= 5 V
I
ISL
1
2.7
4
mA
1
The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2
The measurement method is simplified if V
PS
= 0 V, in order to distinguish I
D
from I
DSP
. Refer to OPEN CIRCUIT LOAD DETECTION
CHARACTERISTICS.
3
This is not a directly measurable parameter.
October 2002
3
Rev 1.000
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