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參數(shù)資料
| 型號： | PIP3102-R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | LOGIC LEVEL TOPFET |
| 中文描述： | 44 A BUF OR INV BASED PRPHL DRVR, PSSO5 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 156K |
| 代理商： | PIP3102-R |
Philips Semiconductors
Product Specification
Logic level TOPFET
PIP3102-R
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
Continuous voltage
V
DS
Drain source voltage
1
Continuous currents
I
D
Drain current
CONDITIONS
MIN.
MAX.
UNIT
V
IS
= 0 V
-
50
V
V
PS
= 5 V; T
mb
=
25C
-
self -
limited
30
5
5
5
A
V
PS
= 0 V; T
mb
=
85C
-
A
I
I
I
F
I
P
Input current
Flag current
Protection supply current
Thermal
Total power dissipation
Storage temperature
Junction temperature
2
Mounting base temperature
-5
-5
-5
mA
mA
mA
P
tot
T
stg
T
j
T
sold
T
mb
= 25C
-
90
175
150
260
W
C
C
C
-55
-
-
continuous
during soldering
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply
connected, TOPFET can protect
itself from two types of overload -
overtemperature and short circuit
load.
SYMBOL
PARAMETER
Overload protection
3
For overload conditions an n-MOS
transistor turns on between the
input and source to quickly
discharge the power MOSFET
gate capacitance.
REQUIRED CONDITION
protection supply
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
MIN.
MAX.
UNIT
V
DS
Drain source voltage
V
PS
≥
4 V
0
35
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
Inductive load turn off
I
DM
= 20 A; V
DD
≤
20 V
E
DSM
Non-repetitive clamping energy
T
mb
= 25C
E
DRM
Repetitive clamping energy
T
mb
≤
95C; f = 250 Hz
MIN.
MAX.
UNIT
-
-
350
45
mJ
mJ
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously
latched, it would be reset by this condition.
October 2002
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PIP3102-R,118 | 功能描述:MOSFET N-CH 50V 30A SOT426 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:TOPFET™ 標準包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| PIP3103-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | SOT-223 |
| PIP3103-T,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PIP3104 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| PIP3104-P | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
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