參數(shù)資料
型號: PIP201-12M
英文描述: Analog IC
中文描述: 模擬IC
文件頁數(shù): 4/20頁
文件大?。?/td> 319K
代理商: PIP201-12M
Philips Semiconductors
PIP201-12M
DC to DC converter powertrain
Preliminary data
Rev. 01 — 24 January 2002
12 of 20
9397 750 09032
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
motherboard application, with no forced air cooling, the use of thermal via holes
typically reduces the thermal resistance from 25 K/W to 20 K/W. The additional use of
a small fan can reduce this further to approximately 15 K/W.
The thermal resistance of a particular design can be measured by passing a known
current through the source-drain diode of the lower MOSFET. The direction of current
ow is into VSSO and out of VO. The volt drop between VSSO and VO is then
measured and used to calculate the power dissipation in the PIP201-12M. The case
temperature of the PIP201-12M can be measured using an infra-red thermometer.
The thermal resistance can then be calculated using the following equation:
(3)
where Tcase is the measured case temperature, Tamb is the ambient temperature, I is
the MOSFET current and VF is the volt drop between VSSO and VO.
In a multi-phase design, the thermal resistance of each PIP201-12M should be
measured with current owing in all phases.
12. Test information
Figure 13 shows the test circuit used to measure power loss in the PIP201-12M. The
output voltage is measured using an averaging circuit. This eliminates losses in the
output inductor and the pcb tracks. The calculated power loss, using this method,
includes the losses in the ESR of the input lter capacitors. This must be subtracted
from the total loss to give the net loss in the PIP201-12M.
All holes 0.5 mm diameter, 1 mm spacing.
Fig 12. Printed-circuit board thermal via pattern.
03ag36
PAD1
PAD2
PAD3
R
th j
pcb
()
T
case
T
amb
IV
F
×
-------------------------------
=
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