參數(shù)資料
型號(hào)： PIIPM15P12D007
廠(chǎng)商： International Rectifier
英文描述： Programmable Isolated IPM
中文描述： 可編程隔離有害生物綜合治理
文件頁(yè)數(shù)： 7/25頁(yè)
文件大?。?/td> 1104K
代理商： PIIPM15P12D007
www.irf.com
7
PIIPM15P12D007
I27179 22 - Sep
Electrical Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min.
Typ.
Max.
Units
Test Conditions
Fig.
V
(BR)CES
Collector To Emitter Breakdown Voltage
1200
V
V
GE
= 0V, I
C
= 250
μ
A
V
(BR)CES /
T
Temperature Coeff. of Breakdown Voltage
+1.2
V/oC
V
GE
= 0V, I
C
= 1mA (25 - 125 oC)
I
C
= 15A, V
GE
= 15V
2.70
3.00
5, 6
3.74
4.24
I
C
= 30A, V
GE
= 15V
7, 9
V
CE(on)
Collector To Emitter Saturation Voltage
3.14
3.61
V
I
C
= 15A, V
GE
= 15V, T
J
= 125 oC
V
CE
= V
GE
, I
C
= 250
μ
A
10, 11
V
GE(th)
Gate Threshold Voltage
4.68
4.89
5.30
V
V
GE(th) /
Tj
Temp. Coeff. of Threshold Voltage
-9.80
mV/oC
V
CE
= V
GE
, I
C
= 1mA (25 - 125 oC)
12
g
fe
Forward Trasconductance
8
9
10
S
V
CE
= 50V, I
C
= 15A, PW = 80
μ
s
V
GE
= 0V, V
CE
= 1200V
125
376
1110
V
GE
= 0V, V
CE
= 1200V, T
J
= 125 oC
I
CES
Zero Gate Voltage Collector Current
2000
μ
A
V
GE
= 0V, V
CE
= 1200V, T
J
= 150 oC
2.32
2.52
I
C
= 15A
V
FM
Diode Forward Voltage Drop
2.47
2.64
V
I
C
= 15A, T
J
= 125 oC
V
GE
=± 20V
8
I
GES
Gate To Emitter Leakage Current
±100
nA
R1/2/3
Sensing Resistors
9.9
10
10.1
m
Electrical Characteristics: Bridge
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Parameter Definition
Min.
Typ.
Max.
Units
Test Conditions
Fig.
1.24
1.76
t
p
= 400
μ
s, I
pk
= 30A
t
p
= 400
μ
s, I
pk
= 15A
V
FM
Forward Voltage Drop
1.08
1.27
V
24
V
F(TO)
Threshold voltage
0.78
V
T
J
= 125 oC
T
J
= 125 oC
I
rm
Reverse Leakage Current
5
mA
V
R
= 1200V
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