參數(shù)資料
型號(hào)： PIIPM15P12D007
廠商： International Rectifier
英文描述： Programmable Isolated IPM
中文描述： 可編程隔離有害生物綜合治理
文件頁(yè)數(shù)： 6/25頁(yè)
文件大小： 1104K
代理商： PIIPM15P12D007
www.irf.com
6
PIIPM15P12D007
I27179 22 - Sep
Absolute Maximum Ratings (T
C
=25oC)
Absolute Maximum Ratings indicate sustained limits beyond
which
damage to the device may occur.
All voltage parameters are absolute voltages referenced to V
DC-
, all currents are defined positive into any lead.
Thermal Resistance and Power Dissipation ratings are measured at still air conditions.
Symbol
Parameter Definition
Min.
Max.
Units
V
DC
DC Bus Voltage
0
1000
V
CES
Collector Emitter Voltage
0
1200
V
I
C @ 100C
IGBTs continuous collector current (T
C
= 100 oC, fig. 1)
15
I
C @ 25C
IGBTs continuous collector current (T
C
= 25 oC,fig 1)
30
I
CM
Pulsed Collector Current (Fig. 3, Fig. CT.5)
60
I
F @ 100C
Diode Continuous Forward Current (T
C
= 100 oC)
15
I
F @ 25C
Diode Continuous Forward Current (T
C
= 25 oC)
30
I
FM
Diode Maximum Forward Current
60
A
V
GE
Gate to Emitter Voltage
-20
+20
V
P
D @ 25°C
Power Dissipation (One transistor)
140
Inverter and
Brake
P
D @ 100°C
Power Dissipation (One transistor, T
C
= 100 oC)
55
W
V
RRM
repetitive peak reverse voltage (T
j
= 150 oC)
1400
V
RSM
non repetitive peak reverse voltage
T
j
= 150 oC
Irrm(max)=5mA
1500
V
I
o
Diode Continuous Forward Current (T
C
= 100 oC, 120o Rect conduction angle)
45
100% V
RRM
reapplied
225
I
FSM
One-cycle forward. Non-repetitive on state
surge current (t=10ms, Initial T
j
= 150oC)
No voltage reapplied
270
A
100% V
RRM
reapplied
253
I
2
t
Current I
2
t for fusing (t=10ms, Initial T
j
= 150oC)
No voltage reapplied
365
A
2
s
Bridge
I
2
√
t
Current I
2
√
t for fusing (t=0.1 to 10ms, no voltage reapplied, Initial T
j
= 150oC)
3650
A
2
√
s
V
in
Non isolated supply voltage (DC- referenced)
-20
20
V
in-iso
Isolated supply voltage (GND iso referenced)
-5
5.5
Rx
RS485 Receiver input voltage (GND iso referenced)
-7
12
V
T
A--EDB
Operating Ambient Temperature Range
-25
+70
T
STG-EDB
V
ISO-CONT
R485
V
ISO-TEMP
RS485
Board Storage Temperature Range
-40
AC
DC
+125
800
1000
oC
Input-Output Continuous Withstand Voltage (RH
≤
50%, -40°C
≤
T
A
≤
85°C
)
Embedded
Driving
Board
Input-Output Momentary Withstand Voltage (RH
≤
50%, t = 1 min, T
A
= 25°C)
RMS
2500
V
MT
Mounting Torque
3.5
Nm
T
J
Operating Junction Temperature
-40
+150
T
STG
Storage Temperature Range
-40
+125
oC
Power
Module
Vc-iso
Isolation Voltage to Base Copper Plate
-2500
+2500
V
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