- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄3884 > PIC18F448-E/L (Microchip Technology)IC MCU FLASH 8KX16 W/CAN 44-PLCC PDF資料下載
參數(shù)資料
| 型號(hào)： | PIC18F448-E/L |
| 廠商： | Microchip Technology |
| 文件頁(yè)數(shù)： | 88/116頁(yè) |
| 文件大小： | 0K |
| 描述： | IC MCU FLASH 8KX16 W/CAN 44-PLCC |
| 標(biāo)準(zhǔn)包裝： | 27 |
| 系列： | PIC® 18F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 40MHz |
| 連通性： | CAN，I²C，SPI，UART/USART |
| 外圍設(shè)備： | 欠壓檢測(cè)/復(fù)位，LVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 33 |
| 程序存儲(chǔ)器容量： | 16KB（8K x 16） |
| 程序存儲(chǔ)器類型： | 閃存 |
| EEPROM 大?。?/td> | 256 x 8 |
| RAM 容量： | 768 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 4.2 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 8x10b |
| 振蕩器型： | 外部 |
| 工作溫度： | -40°C ~ 125°C |
| 封裝/外殼： | 44-LCC（J 形引線） |
| 包裝： | 管件 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)當(dāng)前第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)
2006 Microchip Technology Inc.
DS41159E-page 71
PIC18FXX8
6.5
Writing to Flash Program Memory
The minimum programming block is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 8 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction has to be executed 8 times for
each programming operation. All of the table write
operations will essentially be short writes, because only
the holding registers are written. At the end of updating
8 registers, the EECON1 register must be written to, to
start the programming operation with a long write.
The long write is necessary for programming the inter-
nal Flash. Instruction execution is halted while in a long
write cycle. The long write will be terminated by the
internal programming timer.
The EEPROM on-chip timer controls the write time.
The write/erase voltages are generated by an on-chip
charge pump rated to operate over the voltage range of
the device for byte or word operations.
6.5.1
FLASH PROGRAM MEMORY WRITE
SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1.
Read 64 bytes into RAM.
2.
Update data values in RAM as necessary.
3.
Load Table Pointer with address being erased.
4.
Do the row erase procedure.
5.
Load Table Pointer with address of first byte
being written.
6.
Write the first 8 bytes into the holding registers
using the TBLWT instruction, auto-increment
may be used.
7.
Set the EECON1 register for the write operation:
set the EEPGD bit to point to program memory;
clear the CFGS bit to access program memory;
set the WREN to enable byte writes.
8.
Disable interrupts.
9.
Write 55h to EECON2.
10. Write AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
2 ms using internal timer).
13. Re-enable interrupts.
14. Repeat steps 6-14 seven times to write
64 bytes.
15. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 6-3.
FIGURE 6-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
Note:
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 8 bytes in
the holding registers.
Holding Register
TABLAT
Holding Register
TBLPTR = xxxxx7
Holding Register
TBLPTR = xxxxx1
Holding Register
TBLPTR = xxxxx0
8
Write Register
TBLPTR = xxxxx2
Program Memory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PIC16LF874AT-I/L | IC MCU CMOS 4K FLASH LP 44-PLCC |
| PIC18F252T-E/SO | IC MCU CMOS 40MHZ 16K FLSH28SOIC |
| PIC17C766T-33E/PT | IC MCU CMOS 33MHZ 16K EPRM80TQFP |
| PIC17C766T-33E/L | IC MCU CMOS 33MHZ 16K EPRM84PLCC |
| PIC17C766T-16E/PT | IC MCU CMOS 16MHZ 16K EPRM80TQFP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PIC18F448-I/L | 功能描述:8位微控制器 -MCU 16KB 768 RAM 34 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC18F448-I/L | 制造商:Microchip Technology Inc 功能描述:IC 8BIT FLASH MCU CAN ADC 18F448 |
| PIC18F448-I/P | 功能描述:8位微控制器 -MCU 16KB 768 RAM 34 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| PIC18F448-I/P | 制造商:Microchip Technology Inc 功能描述:IC 8BIT FLASH MCU CAN ADC 18F448 |
| PIC18F448-I/PT | 功能描述:8位微控制器 -MCU 16KB 768 RAM 34 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。