參數(shù)資料
型號： PIC16F870-I/SO
廠商： Microchip Technology
文件頁數(shù)： 23/143頁
文件大?。?/td> 0K
描述： IC MCU FLASH 2KX14 EE 28SOIC
產(chǎn)品培訓模塊： Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
標準包裝： 27
系列： PIC® 16F
核心處理器： PIC
芯體尺寸： 8-位
速度： 20MHz
連通性： UART/USART
外圍設備： 欠壓檢測/復位，POR，PWM，WDT
輸入/輸出數(shù)： 22
程序存儲器容量： 3.5KB（2K x 14）
程序存儲器類型： 閃存
EEPROM 大?。?/td> 64 x 8
RAM 容量： 128 x 8
電壓 - 電源 (Vcc/Vdd)： 4 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 5x10b
振蕩器型： 外部
工作溫度： -40°C ~ 85°C
封裝/外殼： 28-SOIC（0.295"，7.50mm 寬）
包裝： 管件
產(chǎn)品目錄頁面： 639 (CN2011-ZH PDF)
配用： XLT28SO-1-ND - SOCKET TRANSITION 28SOIC 300MIL
I3-DB16F871-ND - BOARD DAUGHTER ICEPIC3
2003 Microchip Technology Inc.
DS30569B-page 117
PIC16F870/871
14.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR. and RA4) ......................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ............................................................................................................ -0.3 to +7.5V
Voltage on MCLR with respect to VSS (Note 2) ............................................................................................0 to +13.25V
Voltage on RA4 with respect to Vss ..................................................................................................................0 to +8.5V
Total power dissipation (Note 1) ............................................................................................................................... 1.0W
Maximum current out of VSS pin ........................................................................................................................... 300 mA
Maximum current into VDD pin .............................................................................................................................. 250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
..................................................................................................................... ± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
............................................................................................................. ± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin .................................................................................................... 25 mA
Maximum current sunk by PORTA, PORTB, and PORTE (combined) (Note 3) ................................................... 200 mA
Maximum current sourced by PORTA, PORTB, and PORTE (combined) (Note 3).............................................. 200 mA
Maximum current sunk by PORTC and PORTD (combined) (Note 3) .................................................................200 mA
Maximum current sourced by PORTC and PORTD (combined) (Note 3) ............................................................ 200 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL)
2: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin, rather than
pulling this pin directly to VSS.
3: PORTD and PORTE are not implemented on the 28-pin devices.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
PIC16F870T-E/SO 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC16F870T-E/SS 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC16F870T-I/SO 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC16F870T-I/SS 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
PIC16F871-E/L 功能描述:8位微控制器 -MCU 3.5KB 128 RAM 33 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT
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