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PIC16CR83/84
PIC16F8X
1998 Microchip Technology Inc.
DS30430C-page 87
12.0
ELECTRICAL CHARACTERISTICS FOR PIC16CR83 AND PIC16CR84
Absolute Maximum Ratings
Ambient temperature under bias.............................................................................................................-55
°
C to +125
°
C
Storage temperature.............................................................................................................................. -65
°
C to +150
°
C
Voltage on V
DD
with respect to V
SS
........................................................................................................... -0.3 to +7.5V
Voltage on MCLR with respect to V
SS
(2)
.......................................................................................................-0.3 to +14V
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR)....................................................-0.6V to (V
DD
+ 0.6V)
Total power dissipation
(1)
.....................................................................................................................................800 mW
Maximum current out of V
SS
pin ...........................................................................................................................150 mA
Maximum current into V
DD
pin..............................................................................................................................100 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
20 mA
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................±
20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by
PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB...................................................................................................................100 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
)
Note 2:
Voltage spikes below V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than pulling
this pin directly to V
SS
.
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.