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1995 Microchip Technology Inc.
Preliminary
DS30390B-page 245
PIC16C7X
Applicable Devices
70 71 71A 72 73 73A 74 74A
25.1
DC Characteristics:
PIC16C73A-04 (Commercial, Industrial, Automotive
PIC16C74A-04 (Commercial, Industrial, Automotive
PIC16C73A-10 (Commercial, Industrial, Automotive
PIC16C74A-10 (Commercial, Industrial, Automotive
PIC16C73A-20 (Commercial, Industrial, Automotive
PIC16C74A-20 (Commercial, Industrial, Automotive
(6)
(6)
(6)
(6)
(6)
(6)
)
)
)
)
)
)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40C
-40C
0C
Min
Typ Max Units
≤
≤
≤
T
T
T
A
A
A
≤
≤
≤
+125C for automotive,
+85C for industrial and
+70C for commercial
Conditions
Param
No.
D001
D001A
D002
Characteristic
Sym
Supply Voltage
V
DD
4.0
4.5
-
-
-
6.0
5.5
-
V
V
V
XT, RC and LP osc configuration
HS osc configuration
Device in SLEEP mode
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure Power-on Reset
V
DD
rise rate to ensure
Power-on Reset
Supply Current (Note 2,5) I
DD
V
DR
1.5*
D003
V
POR
-
V
SS
-
V
See section on Power-on Reset for details
D004
S
VDD
0.05*
-
-
V/ms See section on Power-on Reset for details
D010
D013
-
-
2.7
13.5
5
30
mA
mA
XT, RC osc configuration (PIC16C74A-04)
F
OSC
= 4 MHz, V
DD
= 5.5V (Note 4)
HS osc configuration (PIC16C74A-20)
F
OSC
= 20 MHz, V
DD
= 5.5V
BOR enabled V
DD
= 5.0V
D015
Brown-out Reset Current
(Note 7)
Power-down Current
(Note 3,5)
I
BOR
-
300*
500
μ
A
D020
D021
D021A
D021B
D023
I
PD
-
-
-
-
-
10.5
1.5
1.5
1.5
300*
42
21
24
TBD
500
μ
A
μ
A
μ
A
μ
A
μ
A
V
DD
= 4.0V, WDT enabled, -40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled, -0
°
C to +70
°
C
V
DD
= 4.0V, WDT disabled, -40
°
C to +85
°
C
V
DD
= 4.0V, WDT disabled, -40
°
C to +125
°
C
BOR enabled V
DD
= 5.0V
Brown-out Reset Current
(Note 7)
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-
mated by the formula Ir = V
DD
/2Rext (mA) with Rext in kOhm.
5: Timer1 oscillator (when enabled) adds approximately 20
μ
A to the specification. This value is from charac-
terization and is for design guidance only. This is not tested.
6: Automotive operating range is Advanced information for this device.
7: The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD
or I
PD
measurement.
I
BOR
*