1995 Microchip Technology Inc.
DS30390B-page 175
PIC16C7X
Applicable Devices
70 71 71A 72 73 73A 74 74A
19.0
ELECTRICAL CHARACTERISTICS FOR PIC16C71
Absolute Maximum Ratings
Ambient temperature under bias.................................................................................................................-55 to +125C
Storage temperature.............................................................................................................................. -65C to +150C
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR) ...................................................-0.6V to (V
Voltage on V
DD
with respect to V
SS
................................................................................................................ 0 to +7.5V
Voltage on MCLR with respect to V
SS
(Note 2) .................................................................................................0 to +14V
Total power dissipation (Note 1)...........................................................................................................................800 mW
Maximum current out of V
SS
pin ...........................................................................................................................150 mA
Maximum current into V
DD
pin..............................................................................................................................100 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
Output clamp current, I
OK
(V0 < 0 or V0 > V
DD
)
..............................................................................................................±
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................20 mA
Maximum current sunk by
PORTA..........................................................................................................................80 mA
Maximum current sourced by PORTA.....................................................................................................................50 mA
Maximum current sunk by PORTB........................................................................................................................150 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
Note 2:
Voltage spikes below V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up. Thus,
a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than pulling
this pin directly to V
SS
.
DD
+ 0.6V)
20 mA
20 mA
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
-V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
)
TABLE 19-1:
CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS
AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES)
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
OSC
PIC16C71-04
PIC16C71-20
PIC16LC71-04
JW Devices
RC
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.0V to 6.0V
: 3.3 mA max. at 5.5V
: 14
μ
A max. at 4V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.5V to 5.5V
: 1.8 mA typ. at 5.5V
: 1.0
μ
A typ. at 4V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 3.0V to 6.0V
: 1.4 mA typ. at 3.0V
: 0.6
μ
A typ. at 3V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.0V to 6.0V
: 3.3 mA max. at 5.5V
: 14
μ
A max. at 4V
XT
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.0V to 6.0V
: 3.3 mA max. at 5.5V
: 14
μ
A max. at 4V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.5V to 5.5V
: 1.8 mA typ. at 5.5V
: 1.0
μ
A typ. at 4V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 3.0V to 6.0V
: 1.4 mA typ. at 3.0V
: 0.6
μ
A typ. at 3V
V
I
DD
I
PD
Freq: 4 MHz max.
DD
: 4.0V to 6.0V
: 3.3 mA max. at 5.5V
: 14
μ
A max. at 4V
HS
V
DD
: 4.5V to 5.5V
V
DD
: 4.5V to 5.5V
Do not use in HS mode
V
DD
: 4.5V to 5.5V
I
DD
: 13.5 mA typ. at 5.5V
I
DD
: 30 mA max. at 5.5V
I
DD
: 30 mA max. at 5.5V
I
PD
: 1.0
μ
A typ. at 4.5V
I
PD
: 1.0
μ
A typ. at 4.5V
I
PD
: 1.0
μ
A typ. at 4.5V
Freq: 4 MHz max.
Freq: 20 MHz max.
Freq: 20 MHz max.
LP
V
I
DD
DD
: 4.0V to 6.0V
: 15
μ
A typ. at 32 kHz,
4.0V
: 0.6
μ
A typ. at 4.0V
Freq: 200 kHz max.
I
PD
Do not use in LP mode
V
I
DD
DD
: 3.0V to 6.0V
: 32
μ
A max. at 32 kHz,
3.0V
: 9
μ
A max. at 3.0V
Freq: 200 kHz max.
I
PD
V
I
DD
DD
: 3.0V to 6.0V
: 32
μ
A max. at 32 kHz,
3.0V
: 9
μ
A max. at 3.0V
Freq: 200 kHz max.
I
PD
The shaded sections indicate oscillator selections which are tested for functionality, but not for MIN/MAX specifications. It is recom-
mended that the user select the device type that ensures the specifications required.
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