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| 型號(hào)： | PIC12C509AT-04I/MF |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 93/113頁 |
| 文件大小： | 0K |
| 描述： | IC MCU OTP 1KX12 8-DFN |
| 標(biāo)準(zhǔn)包裝： | 3,300 |
| 系列： | PIC® 12C |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 4MHz |
| 外圍設(shè)備： | POR，WDT |
| 輸入/輸出數(shù)： | 5 |
| 程序存儲(chǔ)器容量： | 1.5KB（1K x 12） |
| 程序存儲(chǔ)器類型： | OTP |
| RAM 容量： | 41 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 3 V ~ 5.5 V |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 8-VDFN 裸露焊盤 |
| 包裝： | 帶卷 (TR) |
| 配用： | AC164324-ND - MODULE SKT FOR MPLAB 8DFN/16QFN XLT08DFN2-ND - SOCKET TRANSITION ICE 14DIP/8DFN XLT08DFN-ND - SOCKET TRANSITION ICE 8DFN AC164032-ND - ADAPTER PICSTART PLUS 8DFN/DIP AC124001-ND - MODULE SKT PROMATEII 8DIP/SOIC |
| 其它名稱： | PIC12C509AT04I/MF |
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PIC12C5XX
DS40139E-page 80
1999 Microchip Technology Inc.
13.1
DC CHARACTERISTICS:
PIC12C508A/509A (Commercial, Industrial, Extended)
PIC12CE518/519 (Commercial, Industrial, Extended)
PIC12CR509A (Commercial, Industrial, Extended)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0
°C ≤ TA ≤ +70°C (commercial)
–40
°C ≤ TA ≤ +85°C (industrial)
–40
°C ≤ TA ≤ +125°C (extended)
Parm
No.
Characteristic
Sym
Min
Typ(1)
Max
Units
Conditions
D001
Supply Voltage
VDD
3.0
5.5
V
FOSC = DC to 4 MHz (Commercial/
Industrial, Extended)
D002
RAM Data Retention
Voltage(2)
VDR
1.5*
V
Device in SLEEP mode
D003
VDD Start Voltage to ensure
Power-on Reset
VPOR
VSS
V
See section on Power-on Reset for details
D004
VDD Rise Rate to ensure
Power-on Reset
SVDD
0.05*
V/ms
See section on Power-on Reset for details
D010
D010C
D010A
Supply Current(3)
IDD
—
0.8
19
30
1.4
27
35
55
mA
A
XT and EXTRC options (Note 4)
FOSC = 4 MHz, VDD = 5.5V
INTRC Option
FOSC = 4 MHz, VDD = 5.5V
LP OPTION, Commercial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
LP OPTION, Industrial Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
LP OPTION, Extended Temperature
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
D020
D021
D021B
Power-Down Current (5)
IPD
—
0.25
2
4
5
12
A
VDD = 3.0V, Commercial WDT disabled
VDD = 3.0V, Industrial WDT disabled
VDD = 3.0V, Extended WDT disabled
D022
Power-Down Current
IWDT
—
2.2
4
5
6
11
A
VDD = 3.0V, Commercial
VDD = 3.0V, Industrial
VDD = 3.0V, Extended
Supply Current (3)
During read/write to
EEPROM peripheral
IEE
—
0.1
0.2
mA
FOSC = 4 MHz, Vdd = 5.5V,
SCL = 400kHz
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°C. This data is for design guid-
ance only and is not tested.
2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on the
current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: IR = VDD/2Rext (mA) with Rext in kOhm.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is mea-
sured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
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